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Freescale Semiconductor Technical Data
Document Number: MRFG35020A Rev. 0, 1/2008
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and CDMA amplifier applications. To be used in Class AB applications. * Typical WiMAX Performance: VDD = 12 Volts, IDQ = 300 mA, Pout = 2 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain -- 11.5 dB Drain Efficiency -- 22% RCE -- - 33 dB Meets ETSI Type G Mask * 20 Watts P1dB @ 3500 MHz, CW Features * Supports up to 28 MHz Bandwidth OFDM Signals * Internally Input Matched for Ease of Use * High Gain, High Efficiency and High Linearity * Excellent Thermal Stability * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
MRFG35020AR1
3.5 GHz, 20 W, 12 V WiMAX POWER FET GaAs PHEMT
CASE 360E - 01, STYLE 2 NI - 360 SHORT LEAD
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Operating Case Temperature Range Symbol VDSS VGS Pin Tstg Tch TC Symbol RJC Value 15 -5 34 - 40 to +175 175 - 40 to +90 Unit Vdc Vdc dBm C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Value (2) 2.7 Unit C/W
1. For reliable operation, the operating channel temperature should not exceed 150C. Exceeding 150C channel operating temperature may result in device performance degradation. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRFG35020AR1 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic DC Characteristics Off State Drain Current (VDS = 3.5 Vdc, VGS = - 2.2 Vdc) Off State Current (VDS = 28.5 Vdc, VGS = - 2.5 Vdc) Gate - Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 42.5 mA) IDSO IDSX VGS(th) -- -- - 1.2 10 2 - 0.95 425 42.5 - 0.7 Adc mAdc Vdc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) (1) VDD = 12 Vdc, IDQ = 300 mA, Pout = 2 W Avg., f = 3500 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Output Power, 1 dB Compression Point, CW 1. Measurements made with device in test fixture. Gps D ACPR P1dB 9.5 18 -- -- 11.5 22 - 43 20 -- -- - 39 -- dB % dBc W
Typical RF Performance (In Freescale Test Fixture, 50 ohm system) VDD = 12 Vdc, IDQ = 300 mA, f = 3500 MHz
MRFG35020AR1 2 RF Device Data Freescale Semiconductor
VBIAS C8 C7 C6 C5 C13 C12 C11 C10
VSUPPLY
C4
C14
C3
C15
C2
C16
R1 Z5 RF INPUT Z1 Z2 C1 Z4 Z3 Z8 C17 Z7 Z9 Z10 Z11 C18 Z12 Z13 Z6
RF OUTPUT
Z1 Z2 Z3 Z4 Z5, Z6 Z7
0.021 x 0.728 Microstrip 0.045 x 0.522 Microstrip 0.200 x 0.215 Microstrip 0.150 x 0.522 Microstrip 0.279 x 90 Microstrip Radial Stub 0.060 x 0.420 Microstrip
Z8 Z9 Z10 Z11, Z12 Z13 PCB
0.375 x 0.172 Microstrip 0.074 x 0.068 Microstrip 0.030 x 0.347 Microstrip 0.040 x 0.050 Microstrip 0.021 x 0.713 Microstrip Rogers 4350, 0.010, r = 3.5
Figure 1. MRFG35020A Test Circuit Schematic Table 5. MRFG35020A Test Circuit Component Designations and Values
Part C1 C2, C16 C3, C15 C4, C14 C5, C13 C6, C12 C7, C11 C8, C10 C9 C17 C18 R1 Description 3.9 pF Chip Capacitor 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.01 F Chip Capacitors 39K pF Chip Capacitors 10 F Chip Capacitors None 1.8 pF Chip Capacitors 1.5 pF Chip Capacitor 6.2 , 1/4 W Chip Resistor 08051J1R8BBS 08051J1R5BBS CRCW12066R20FKEA AVX AVX Vishay Part Number 08051J3R9BBS ATC100A100JT150XT ATC100A101JT150XT ATC100B101JT500XT ATC100B102JT50XT ATC200B103KT50XT ATC200B393KT50XT GRM55DR61H106KA88B Manufacturer AVX ATC ATC ATC ATC ATC ATC Murata
MRFG35020AR1 RF Device Data Freescale Semiconductor 3
C8
C7
C6
C5
C13
C12
C11
C10
C2
C4 C3 R1
C14 C15 C16
C1
C17
C18
CUT OUT AREA
MRFG35020A Rev. 2
Figure 2. MRFG35020A Test Circuit Component Layout
MRFG35020AR1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
16 14 Gps, POWER GAIN (dB) 12 Gps 10 8 D 6 4 20 22 24 26 28 30 32 34 36 38 Pout, OUTPUT POWER (dBm) 10 0 30 20 VDS = 12 Vdc, IDQ = 300 mA, f = 3500 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth S = 0.697e-153.9_, L = 0.949e-166.7_ 60 50 40 D, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB)
Figure 3. Single - Channel W - CDMA Power Gain and Drain Efficiency versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 0 VDS = 12 Vdc, IDQ = 300 mA, f = 3500 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth S = 0.697e-153.9_, L = 0.949e-166.7_ -5
-10
-10
-20
IRL
-15
-30
-20
-40 ACPR -50 20 22 24 26 28 30 32 34 36 38 Pout, OUTPUT POWER (dBm)
-25
-30
Figure 4. Single - Channel W - CDMA Adjacent Channel Power Ratio and IRL versus Output Power
NOTE: All data is referenced to package lead interface. S and L are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown.
MRFG35020AR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
14 12 Gps, POWER GAIN (dB) 10 8 6 D 4 2 24 Gps 60 50 40 30 20 VDS = 12 Vdc, IDQ = 300 mA, f = 3500 MHz Single-Carrier W-CDMA, 3.84 MHz 10 Channel Bandwidth, Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) 0 30 32 34 36 38 40 42 Pout, OUTPUT POWER (dBm) D, DRAIN EFFICIENCY (%) D, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB)
26
28
Figure 5. Single - Channel W - CDMA Power Gain and Drain Efficiency versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 0 VDS = 12 Vdc, IDQ = 300 mA, f = 3500 MHz, Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) IRL 0
-10
-10
-20
-20
-30
-30
-40
ACPR
-40
-50 24 26 28 30 32 34 36 30 38 40 42 Pout, OUTPUT POWER (dBm)
-50
Figure 6. Single - Channel W - CDMA Adjacent Channel Power Ratio and IRL versus Output Power
16 14 Gps, POWER GAIN (dB) 12 Gps 10 8 6 4 3400 D 26 24 22 20 3600 VDS = 12 Vdc, IDQ = 300 mA, Pout = 33 dBm Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) 32 30 28
3450
3500 f, FREQUENCY (MHz)
3550
Figure 7. Single - Channel W - CDMA Power Gain and Drain Efficiency versus Frequency NOTE: Data is generated from the test circuit shown. MRFG35020AR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 0 VDS = 12 Vdc, IDQ = 300 mA, Pout = 33 dBm Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) 0
-20 IRL -30
-10
-15
-40 ACPR -50 3400 3450 3500 f, FREQUENCY (MHz) 3550
-20
-25 3600
Figure 8. Single - Channel W - CDMA Adjacent Channel Power Ratio and IRL versus Frequency
-5 EVM, ERROR VECTOR MAGNITUDE (dB) -10 -15 -20 -25 D -30 EVM -35 20 0 22 24 26 28 30 32 34 36 38 40 42 Pout, OUTPUT POWER (dBm) 10 VDS = 12 Vdc, IDQ = 300 mA, f = 3500 MHz Single-Carrier OFDM 802.16d, 64 QAM 3/4 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 60 50 40 30 20 D, DRAIN EFFICIENCY (%)
Figure 9. Single - Channel OFDM Error Vector Magnitude and Drain Efficiency versus Output Power NOTE: Data is generated from the test circuit shown.
IRL, INPUT RETURN LOSS (dB)
-10
-5
MRFG35020AR1 RF Device Data Freescale Semiconductor 7
Zo = 25
f = 3500 MHz Zload
Zsource
f = 3500 MHz
VDD = 12 Vdc, IDQ = 300 mA, Pout = 2 W Avg. f MHz 3500 Zsource W 9.4 - j11.2 Zload W 1.3 - j5.8
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 10. Series Equivalent Source and Load Impedance
MRFG35020AR1 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MRFG35020AR1 RF Device Data Freescale Semiconductor 9
MRFG35020AR1 10 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Jan. 2008 * Initial Release of Data Sheet Description
MRFG35020AR1 RF Device Data Freescale Semiconductor 11
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MRFG35020AR1
Rev. 12 0, 1/2008 Document Number: MRFG35020A
RF Device Data Freescale Semiconductor

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